3.4/4.0 GHz Tunable Resonant Cavity in SIW Technology Using Metal Post and PIN Diode on a Low-Cost Biasing Network for 5G Applications

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dc.contributor.authorCaleffo, Ricardo Caranicola
dc.contributor.authorCorrera, Fatima Salete
dc.date.accessioned2021-12-21T19:02:59Z
dc.date.available2021-12-21T19:02:59Z
dc.date.issued2020
dc.description.abstractThis paper presents a dual-band resonant cavity in Substrate Integrated Waveguide (SIW) technology to operate in the range from 3.3 GHz to 4.2 GHz, spectrum considered for the Fifth Generation (5G) network. The cavity was designed to operate at 3.4 GHz and 4.0 GHz. To achieve different states, a jumper and a PIN diode switch are considered as switching elements, connecting and disconnecting the bottom and the upper walls of the SIW resonant cavity through a metal post inserted inside its internal volume. A fitting equation is proposed to predict the maximum resonance frequency caused by the insertion of a single metal post inside the internal volume of the SIW resonant cavity and a new low-cost biasing network is designed on a thin dielectric substrate allocated on the upper wall of the SIW resonant cavity, using transmissions lines and a single capacitor, reducing the final cost and the insertion losses. Good agreement was observed among the fitting equation, computational electromagnetic simulations, and experimental results, validating the proposed methods.en_ES
dc.identifier.citationCaleffo, R. C., & Correra, F. S. (2020). 3.4/4.0 GHz Tunable Resonant Cavity in SIW Technology Using Metal Post and PIN Diode on a Low-Cost Biasing Network for 5G Applications. En Journal of Microwaves, Optoelectronics and Electromagnetic Applications (Vol. 19, N�mero 1, pp. 94-105). https://doi.org/10.1590/2179-10742020v19i11881en_ES
dc.identifier.issn2179-1074
dc.identifier.urihttp://repositoriobibliotecas.uv.cl/handle/uvscl/3112
dc.language.isoen_USen_ES
dc.publisherJournal of Microwaves, Optoelectronics and Electromagnetic Applicationsen_ES
dc.subjectBIASING NETWORKen_ES
dc.subjectSIW TECHNOLOGYen_ES
dc.subjectTUNABLE CIRCUITSen_ES
dc.subject5G FREQUENCIESen_ES
dc.title3.4/4.0 GHz Tunable Resonant Cavity in SIW Technology Using Metal Post and PIN Diode on a Low-Cost Biasing Network for 5G Applicationsen_ES
dc.typeArticuloen_ES
dc.ubicacionhttps://doi.org/10.1590/2179-10742020v19i11881en_ES
uv.catalogadorSGGen_ES
uv.colectionBibliografía 5Gen_ES

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